Selective adsorption of metallocenes on clean and chemically modified Si(111) surfaces

Interface Structure and Surface Polarity in CdTe/ZnTe/(112)Si Hetero-Epitaxial System

Tellurium adsorption on clean (112) Si surfaces obey a second order kinetic law. The adsorbed Te ad-atoms are highly immobile. Activation energies of adsorption and desorption were measured by isothermal desorption rates. A surface bond energy model was used to calculate the total energy for Te chemisorption on (111) terraces. This model yields a Si-Te bond energy of about 3.46 eV. As-Te bond e...

Controlled surface functionalization via self-selective metal adsorption and pattern transformation on the vicinal Si(111) surface

We demonstrate a self-selective metal adsorption and pattern transformation process on vicinal Si 111 surfaces. When Au atoms are deposited onto the self-organized periodic Si 111 surface patterns, the Au atoms self-select to adsorb predominantly onto one of the two distinct domains, the Si 111 terrace or the stepbunched facet at different Au coverage. This leads to a systematic transformation ...

محاسبه سطح مشترک (111)Pb/Si با استفاده از نظریه تابعی چگالی

  Work function and surface energy per unit area were calculated in the framework of density functional theory (DFT) with Linearized A ug mented Plane Wave Plus Local Orbital method in full potential for a clean symmetric slab of silicon containing two (top and bottom) surfaces. The surfaces were theoretically modeled using supercell technique by stacking a variety of silicon layers along (111)...

Scanning Tunneling Microscopy and Photoelectron Spectroscopy Studies of Si(111) and Ge(111) Surfaces: Clean and Modified by H or Sn Atoms

Evolution of surface morphology of vicinal Si(111) surfaces after aluminum deposition

We have studied changes in surface morphology of vicinal Si(111) surfaces with a miscut of 1.3° in the [2:11] direction after Al deposition at elevated temperatures. The clean surface phase separates into a (111)-oriented phase and a stepped phase. Submonolayer Al deposition at 650°C, the normal preparation temperature of the Al/Si(111)-(E3×E3)R30° structure, only induces minor changes in the s...